收藏本站
SQD19P06-60L
www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = - 10 V
R DS(on) ( ? ) at V GS = - 4.5 V
I D (A)
Configuration
TO-252
Drain Connected to Tab
G
- 60
0.055
0.100
- 20
Single
S
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Package with Low Thermal Resistance
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
? AEC-Q101 Qualified d
G
D
S
D
Top View
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
P-Channel MOSFET
TO-252
SQD19P06-60L-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 60
± 20
UNIT
V
Continuous Drain Current
T C = 25 °C
T C = 125 °C
I D
- 20
- 11
Continuous Source Current (Diode
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Conduction) a
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I S
I DM
I AS
E AS
P D
- 25
- 80
- 24
28
46
15
A
mJ
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mount c
R thJA
R thJC
50
3.2
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-2065-Rev. C, 24-Oct-11
1
Document Number: 65158
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SQD23N06-31L-GE3 MOSFET N-CH D-S 60V TO252
SQD35N05-26L-GE3 MOSFET N-CH D-S 55V 30A TO252
SQD40N04-10A-GE3 MOSFET N-CH D-S 40V 42A TO252
SQD50N02-04-GE3 MOSFET N-CH D-S 20V 50A TO252
SQD50P04-09L-GE3 MOSFET P-CH D-S 40V TO252
SQD50P04-13L-GE3 MOSFET P-CH D-S 40V TO252
SQD50P06-15L-GE3 MOSFET P-CH 60V 50A TO252
SQJ412EP-T1-GE3 MOSFET N-CH D-S 40V PPAK 8SOIC
相关代理商/技术参数
SQD200A40 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULE
SQD200A60 制造商:n/a 功能描述:Darlington Module
SQD23N06-31L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQD23N06-31L-GE3 功能描述:MOSFET 60V 23A 100W 31mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQD25N06-22L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQD25N06-22L-GE3 功能描述:MOSFET 60V 25A 62W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQD25N06-35L 制造商:Vishay Intertechnologies 功能描述:
SQD25N06-35L-GE3 功能描述:MOSFET 60V 25A 50W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube